| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To realize high power of a semiconductor optical modulator and modulator integrated type semiconductor laser by making large detuning and low chirping characteristic compatible with each other without deteriorating an extinction ratio characteristic. <P>SOLUTION: The semiconductor optical modulator is formed on a semiconductor substrate and modulates incident light having a specified wavelength by utilizing an electroabsorption effect in a semiconductor absorption layer, wherein the semiconductor absorption layer has a quantum well structure composed of quantum well layers and barrier layers wherein the number of the quantum well layers are set to be≥6 and≤12 and thickness of the quantum well layers are set to be≥12 nm and≤18 nm. Furthermore, by introducing compressive strain to the quantum well layers, band discontinuity (ΔEv) of valence bands between the quantum well layers and the barrier layers is made to be 0.3 eV or less, and consequently piling up of carriers is suppressed. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
