STRUCTURE AND METHOD FOR INTEGRATING ULTRA-LOW DIELECTRIC CONSTANT (k) DIELECTRIC HAVING IMPROVED RELIABILITY

摘要

PROBLEM TO BE SOLVED: To provide an improved BEOL interconnection structure that has a ULK (ultra-low k) dielectric. SOLUTION: This structure can be of a single or dual damascene type provided with high-density TDL (thin dielectric layer) between a metal barrier layer and the ULK dielectric. Further, a method of manufacturing a BEOL interconnection structure includes (i) a method of forming a high-density TDL in an opening of the ULK dielectric bored by etching, and (ii) a method of arranging the ULK dielectric in a process chamber on a cold chuck, putting a seal agent into the process chamber and further performing an activating step. COPYRIGHT: (C)2005,JPO&NCIPI