| 摘要 |
A method for manufacturing a semiconductor device is provided to improve Vt control and current leakage property due to doping a channel uniformly and thinly on a surface of a recess gate region by doping boron ion and simultaneously growing an SEG film at inner side of a recess gate region, and perform no additional a process of supplying ion. A pad oxide layer is formed on a semiconductor substrate, and a recess gate region(130) is formed by etching the pad oxide layer and the semiconductor substrate of a predetermined depth. An SEG film(140) is formed by growing a silicon layer of the recess gate region. A gate oxide layer(150) is formed within the recess gate region. After forming a polysilicon layer(160), a gate metal layer(170) and a gate hard mask layer sequentially on the entire surface of the resultant structure, a gate pattern is formed by patterning.
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