发明名称 METHOD AND APPARATUS FOR REMOVING THIN FILM
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for removing a part of a thin film formed on a substrate by irradiating the part with a laser beam, by which method and apparatus, the generation of cracks on the substrate can be prevented by suppressing the thermal effect on the portion except the part to be removed, and the treated area per a unit time can be improved. <P>SOLUTION: In the method for removing the thin film, when a removal region 11 of the thin film 1 on the substrate 2 is irradiated with a laser beam 3 within an infrared wavelength region, the boundary portions 12a, 12b of the removal region 11 are irradiated with laser beams 4a, 4b within an ultraviolet wavelength region, before being irradiated with the laser beam 3 within the infrared wavelength region, or simultaneously or almost simultaneously with the irradiation with the laser beam 3 within the infrared wavelength region. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008023547(A) 申请公布日期 2008.02.07
申请号 JP20060197412 申请日期 2006.07.19
申请人 TAKEI ELECTRIC INDUSTRIES CO LTD 发明人 KUWABARA TARO;AOKI HIDENORI;KUME KIYOSHI;KAWAKAMI YOICHI;KATAYAMA SEIJI
分类号 B23K26/36;B23K26/06;B23K26/067;B23K26/08;B23K26/14;B23K101/40;G02F1/13 主分类号 B23K26/36
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