PHOTO DIODE FOR SENSING ULTRAVIOLET RAYS AND IMAGE SENSOR COMPRISING THE SAME

摘要

A photo diode for sensing ultraviolet rays and an image sensor comprising the same are provided to form a second conductive type well in a stripe pattern on a surface of a first conductive type semiconductor substrate. A photo diode for sensing ultraviolet rays comprises a first conductive type semiconductor substrate(11) and a second conductive well(12b). The second conductive well is formed by implanting impurities into a surface of the semiconductor substrate. The second conductive well includes a plurality of stripe patterns which are arranged repeatedly in a predetermined interval. An anti-reflective layer(15) is arranged on a surface of the first conductive type semiconductor substrate. The anti-reflective layer is formed with a stacked structure of a SiN thin film and an SiO2 thin film.