| 摘要 |
<p>A method of manufacturing a semiconductor device is provided to form a fine pattern in a peripheral circuit region and increase device efficiency by varying thicknesses of anti-reflection layers in a cell region and the peripheral circuit region. A method of manufacturing a semiconductor device comprises the steps of: forming a hard mask layer(110) and a first anti-reflection layer on a cell region and a peripheral circuit region of a semiconductor substrate(100); etching the first anti-reflection layer to expose the hard mask layer on the peripheral circuit region; forming a second anti-reflection layer(127) having a predetermined thickness over the entire upper surface; and etching the first and second anti-reflection layers and hard mask layer to form a line/space pattern. The line space pattern of the cell region is denser than that of the peripheral circuit region.</p> |
