发明名称 METHOD FOR FRACTURING SEMICONDUCTOR SUBSTRATE, METHOD FOR FRACTURING SOLAR CELL, AND THE SOLAR CELL
摘要 In accordance with the present invention, the dividing grooves 8 are formed so as not to be parallel to cleavage planes of the semiconductor substrate 1, and the semiconductor substrate 1 is bent along the dividing grooves 8, whereby the semiconductor substrate 1 is fractured along the dividing grooves 8.
申请公布号 US2008230115(A1) 申请公布日期 2008.09.25
申请号 US20080046534 申请日期 2008.03.12
申请人 SANYO ELECTRIC CO., LTD. 发明人 KANNOU HIROYUKI;SHIMA MASAKI
分类号 H01L31/04;H01L21/78;H01L31/18 主分类号 H01L31/04
代理机构 代理人
主权项
地址