发明名称 |
METHOD FOR FRACTURING SEMICONDUCTOR SUBSTRATE, METHOD FOR FRACTURING SOLAR CELL, AND THE SOLAR CELL |
摘要 |
In accordance with the present invention, the dividing grooves 8 are formed so as not to be parallel to cleavage planes of the semiconductor substrate 1, and the semiconductor substrate 1 is bent along the dividing grooves 8, whereby the semiconductor substrate 1 is fractured along the dividing grooves 8.
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申请公布号 |
US2008230115(A1) |
申请公布日期 |
2008.09.25 |
申请号 |
US20080046534 |
申请日期 |
2008.03.12 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
KANNOU HIROYUKI;SHIMA MASAKI |
分类号 |
H01L31/04;H01L21/78;H01L31/18 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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