Semiconductor light emitting device

摘要

A semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, a first electrode disposed below the light emitting structure, the first electrode being electrically connected to the first conductivity type semiconductor layer, a second electrode within the light emitting structure, the second electrode being electrically connected to the second conductivity type semiconductor layer, an insulating part electrically separating the second electrode from the first conductivity type semiconductor layer, the active layer, and the first electrode, a first pad electrode electrically connected to the first electrode, and a second pad electrode electrically connected to the second electrode, the second pad electrode being exposed to a top surface of the light emitting structure.

主权项

1. A semiconductor light emitting device, comprising:
a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode disposed below the light emitting structure, the first electrode being electrically connected to the first conductivity type semiconductor layer; a second electrode within the light emitting structure, the second electrode being electrically connected to the second conductivity type semiconductor layer; an insulating part electrically separating the second electrode from the first conductivity type semiconductor layer, the active layer, and the first electrode; a first pad electrode electrically connected to the first electrode; and a second pad electrode electrically connected to the second electrode, the second pad electrode being within the light emitting structure and exposed through a top surface of the light emitting structure, wherein an upper surface of the second pad electrode is level with an upper surface of the second conductivity type semiconductor layer to define the exposed top surface of the light emitting structure, and the second pad electrode is on a portion of the second electrode.