Transfer-free batch fabrication of single layer graphene devices

摘要

A method of manufacturing one or more graphene devices is disclosed. A thin film growth substrate is formed directly on a device substrate. Graphene is formed on the thin film growth substrate. A transistor is also disclosed, having a device substrate and a source supported by the device substrate. The transistor also has a drain separated from the source and supported by the device substrate. The transistor further has a single layer graphene (SLG) channel grown partially on and coupling the source and the drain. The transistor also has a gate aligned with the SLG channel, and a gate insulator between the gate and the SLG channel. Integrated circuits and other apparati having a device substrate, a thin film growth substrate formed directly on at least a portion of the device substrate, and graphene formed directly on at least a portion of the thin film growth substrate are also disclosed.

主权项

1. A method of manufacturing one or more graphene devices, comprising:
forming a thin film growth substrate directly on a device substrate; forming a graphene layer on the thin film growth substrate; processing the graphene layer and the thin film growth substrate to form a patterned graphene layer upon a patterned thin film growth substrate; and undercutting the patterned thin film growth substrate with respect to the patterned graphene layer formed upon the patterned thin film growth substrate to provide an undercut patterned thin film growth substrate having the patterned graphene layer formed upon the undercut patterned thin film growth substrate.