Solid-state imaging device and manufacturing method thereof

摘要

A solid-state imaging device includes a photoelectric conversion unit, a transistor, and an element separation region separating the photoelectric conversion unit and the transistor. The photoelectric conversion unit and the transistor constitute a pixel. The element separation region is formed of a semiconductor region of a conductivity type opposite to that of a source region and a drain region of the transistor. A part of a gate electrode of the transistor protrudes toward the element separation region side beyond an active region of the transistor. An insulating film having a thickness substantially the same as that of a gate insulating film of the gate electrode of the transistor is formed on the element separation region continuing from a part thereof under the gate electrode of the transistor to a part thereof continuing from the part under the gate electrode of the transistor.

主权项

1. A solid-state imaging device comprising:
a gate electrode of a first transfer transistor between a floating diffusion unit and a first photodiode in a layout of a pixel array; a gate electrode of a second transfer transistor between the floating diffusion unit and a second photodiode in the layout of the pixel array; a gate electrode of a selection transistor between a first semiconductor region and a second semiconductor region in the layout of the pixel array; a gate electrode of an amplification transistor between the second semiconductor region and a third semiconductor region in the layout of the pixel array; and an element separation region between the first photodiode and the gate electrode of the amplification transistor in the layout of the pixel array, wherein the gate electrode of the amplification transistor extends over a part of the element separation region.