Vertically stacked nonvolatile NAND type flash memory device with U-shaped strings, method for operating the same, and method for fabricating the same

摘要

A nonvolatile memory device includes a substrate including a plurality of active regions which are constituted by a P-type semiconductor; first and second vertical strings disposed over each active region, wherein each of the first and second strings includes a channel vertically extending from the substrate, a plurality of memory cells, and a select transistor, wherein the plurality of memory cells and the select transistor are located along the channel; and a bottom gate being interposed between a lowermost memory cell and the substrate, contacting the channel with a first gate dielectric layer interposed therebetween, and controlling connection of the first vertical string with the second vertical string.

主权项

1. A nonvolatile memory device comprising:
a substrate including a plurality of active regions which are constituted by a P-type semiconductor; and first and second vertical strings disposed over each active region, wherein each of the first and second strings includes a channel vertically extending from the substrate, a plurality of memory cells, and a select transistor, wherein the plurality of memory cells and the select transistor are located along the channel; and wherein a word line of a lowermost memory cell among the plurality of memory cells controls connection of the first vertical string with the second vertical string, and wherein the channel is in a direct contact with a respective active region forming an interface between the channel and the respective active region.