| 主权项 |
1. An integrated millimeter-wave chip package structure, comprising:
a first interposer structure, wherein the first interposer structure comprises a first metal layer, a second metal layer and an insulating support layer located between the first and second metal layers, and the first interposer structure includes at least one first plated through-hole structure, penetrating through the first metal layer, the insulating support layer and the second metal layer and electrically connecting the first metal layer and second metal layer; at least one chip, coupled to the first interposer structure, wherein the at least one chip has an active surface and contact pads located in the active surface of the at least one chip; and a first substrate, coupled to the first interposer structure, wherein the first substrate comprises at least one insulating layer and a third metal layer located on the at last one insulating layer, wherein the third metal layer is located on one side of the first substrate facing the first interposer structure, the first metal layer of the first interposer structure comprises at least one antenna pattern, the at least one antenna pattern is located above or below the at least one chip, the at least one chip is electrically connected to the at least one antenna pattern through the at least one first plated through-hole structure of the first interposer structure. |
