NON-CONTACTING INDUCTIVE INTERCONNECTS

摘要

A non-contacting inductive interconnect of a three-dimensional integrated circuit includes a first silicon substrate having a first inductive loop. A first layer of high permeability material is deposited on the first silicon substrate that has the first inductive loop forming a first high permeability structure. The circuit further includes a second silicon substrate having a second inductive loop. A magnetic coupling is formed between the first inductive loop and the second inductive loop. The first high permeability structure can enhance the magnetic coupling between the first inductive loop and the second inductive loop. In some embodiments, a second layer of the high permeability material is deposited on the second silicon substrate that has the second inductive loop forming a second high permeability structure. The first high permeability structure and the second high permeability structure can form a magnetic circuit coupling the first inductive loop and the second inductive loop.