Method for producing a dopant profile

摘要

A method for producing a dopant profile is provided. The method includes starting from a surface of a wafer-shaped semiconductor component by introducing dopant atoms into the semiconductor component. The dopant-containing layer is produced on or in a region of the surface in order to produce a provisional first dopant profile and then a plurality of semiconductor components having a corresponding layer is subjected to heat treatment on top of one another in the form of a stack in order to produce a second dopant profile having a greater depth in comparison to the first dopant profile.

主权项

1. A method for producing a dopant profile starting from a surface of a chip- or wafer-shaped semiconductor component by introducing dopant atoms into the semiconductor component, comprising:
producing a layer that contains at least one dopant on or in at least one region of the surface in the semiconductor component to produce a provisional first dopant profile, laying a plurality of semiconductor components having the layer on top of one another to form a stack, and subjecting the stack to a heat treatment in order to produce a second dopant profile having a greater depth in comparison to the first dopant profile in the respective semiconductor component, wherein the step of forming the oxide film layer is carried out at a temperature T1 and the step of subjecting the stack to a heat treatment is carried out a temperature T2 with T2-100° C.≦T1≦T2+100° C., and wherein the step of subjecting the stack to heat treatment comprises subjected the stack to the temperature T2 over a holding time th with 10 to 20 min≦th≦24 h.