发明名称 Optical tuning of light emitting semiconductor junctions
摘要 Light emitting semiconductor junctions are disclosed. An exemplary light emitting junction has a first electrical contact coupled to a first side of the junction. The exemplary junction also has a second electrical contact coupled to a second side of the junction. The exemplary junction also has a region of set straining material that exerts a strain on the junction and alters both: (i) an optical polarization, and (ii) an emission wavelength of the junction. The region of set straining material is not on a current path between said first electrical contact and said second electrical contact. The region of set straining material covers a third side and a fourth side of the light emitting junction along a cross section of the light emitting junction. The light emitting semiconductor junction device comprises a three-five alloy.
申请公布号 US9412911(B2) 申请公布日期 2016.08.09
申请号 US201414325131 申请日期 2014.07.07
申请人 The Silanna Group Pty Ltd 发明人 Atanackovic Petar
分类号 H01L33/00;H01L33/44;H01L33/20;H01L33/32;H01L33/30;H01L27/15 主分类号 H01L33/00
代理机构 The Mueller Law Office, P.C. 代理人 The Mueller Law Office, P.C.
主权项 1. An ultraviolet light emitting diode, comprising: an ultraviolet light emitting junction; a first electrical contact coupled to a first side of the junction; a second electrical contact coupled to a second side of the junction; and a region of set straining material that exerts a strain on the junction and alters both:(i) an optical polarization, and (ii) an emission wavelength of the junction; wherein the region of set straining material lies outside a current path that includes the first electrical contact and the second electrical contact; and the light emitting semiconductor junction device comprises a three-five alloy.
地址 Eight Mile Plains, Queensland AU