发明名称 |
Optical tuning of light emitting semiconductor junctions |
摘要 |
Light emitting semiconductor junctions are disclosed. An exemplary light emitting junction has a first electrical contact coupled to a first side of the junction. The exemplary junction also has a second electrical contact coupled to a second side of the junction. The exemplary junction also has a region of set straining material that exerts a strain on the junction and alters both: (i) an optical polarization, and (ii) an emission wavelength of the junction. The region of set straining material is not on a current path between said first electrical contact and said second electrical contact. The region of set straining material covers a third side and a fourth side of the light emitting junction along a cross section of the light emitting junction. The light emitting semiconductor junction device comprises a three-five alloy. |
申请公布号 |
US9412911(B2) |
申请公布日期 |
2016.08.09 |
申请号 |
US201414325131 |
申请日期 |
2014.07.07 |
申请人 |
The Silanna Group Pty Ltd |
发明人 |
Atanackovic Petar |
分类号 |
H01L33/00;H01L33/44;H01L33/20;H01L33/32;H01L33/30;H01L27/15 |
主分类号 |
H01L33/00 |
代理机构 |
The Mueller Law Office, P.C. |
代理人 |
The Mueller Law Office, P.C. |
主权项 |
1. An ultraviolet light emitting diode, comprising:
an ultraviolet light emitting junction; a first electrical contact coupled to a first side of the junction; a second electrical contact coupled to a second side of the junction; and a region of set straining material that exerts a strain on the junction and alters both:(i) an optical polarization, and (ii) an emission wavelength of the junction;
wherein the region of set straining material lies outside a current path that includes the first electrical contact and the second electrical contact; and the light emitting semiconductor junction device comprises a three-five alloy. |
地址 |
Eight Mile Plains, Queensland AU |