Semiconductor structure with stress-reducing buffer structure

摘要

A semiconductor structure comprising a buffer structure and a set of semiconductor layers formed adjacent to a first side of the buffer structure is provided. The buffer structure can have an effective lattice constant and a thickness such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 GPa and 2.0 GPa. The buffer structure can be grown using a set of growth parameters selected to achieve the target effective lattice constant a, control stresses present during growth of the buffer structure, and/or control stresses present after the semiconductor structure has cooled.

主权项

1. A method of fabricating a semiconductor structure, the method including:
selecting a set of growth parameters for growing a buffer structure, wherein the set of growth parameters are configured to achieve a target effective lattice constant a for the buffer structure; growing the buffer structure using the selected set of growth parameters, wherein the growing the buffer structure includes:
growing a buffer layer; andgrowing an intermediate layer directly on the buffer layer, wherein the intermediate layer includes a plurality of sub-layers having alternating tensile and compressive stresses, wherein the stresses are adjusted by varying a V/III ratio used during the growth of the plurality of sub-layers; and growing a set of semiconductor layers on the buffer structure, wherein the target effective lattice constant a causes an overall stress in the set of semiconductor layers at room temperature to be compressive and in a range between approximately 0.1 GPa and approximately 2.0 GPa.