Image sensor

摘要

An image sensor has photodiodes formed in a Si substrate and configured to prevent carriers generated at a deep position of the Si substrate from affecting adjacent photodiodes due to lateral diffusion (crosstalk between pixels). A modified layer is formed between adjacent photodiodes and at a depth below that of the photodiodes by a laser to generate a recombination level to thereby suppress crosstalk between pixels.

主权项

1. An image sensor, comprising:
a plurality of semiconductor light receiving elements formed on a semiconductor substrate; and a modified layer configured to trap carriers and formed in an internal region of the semiconductor substrate between adjacent ones of the plurality of semiconductor light receiving elements, the modified layer having a configuration depth, the configuration depth being set depending on a depth of the carriers generated in the semiconductor substrate by an incident light, wherein the modified layer is formed in the internal region of the semiconductor substrate at a given depth as a planar layer configured to trap carriers, the modified layer being formed by adjusting laser light of a wavelength that transmits through the semiconductor substrate so that a focal point thereof is formed at a predetermined depth in the semiconductor substrate with use of a condensing lens, and scanning a surface of the semiconductor substrate with the laser light.