| 发明名称 | Imprint mask, method for manufacturing the same, and method for manufacturing semiconductor device | ||
| 摘要 | According to one embodiment, an imprint mask includes a quartz plate. The quartz plate has a plurality of concave sections formed in part of an upper surface on the quartz plate, and impurities are contained in a portion between the concave sections in the quartz plate. | ||
| 申请公布号 | US9412592(B2) | 申请公布日期 | 2016.08.09 |
| 申请号 | US201414279354 | 申请日期 | 2014.05.16 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Itoh Masamitsu;Kanamitsu Shingo |
| 分类号 | B29C59/02;H01L21/027;B82Y10/00;B82Y40/00;G03F7/00 | 主分类号 | B29C59/02 |
| 代理机构 | Finnegan, Henderson, Farabrow, Garrett & Dunner LLP | 代理人 | Finnegan, Henderson, Farabrow, Garrett & Dunner LLP |
| 主权项 | 1. A substrate for an imprint mask, comprising a quartz plate, the quartz plate having a plurality of concave sections formed in a portion of an upper surface on the quartz plate, a first concave section of the plurality of concave sections having a first side region, a second side region facing the first side region, and a bottom region, impurities being contained in the first side region and the second side region; a concentration of impurities in the first side region and a concentration of impurities in the second side region being larger than a concentration of impurities in the bottom region, and each of a concentration profile of the impurities in the first side region and a concentration profile of the impurities in the second side region having a peak in a thickness direction of the substrate. | ||
| 地址 | Tokyo JP | ||