| 摘要 |
<p>PURPOSE:To enable easy control of the thickness of the high-resistance region by providing polycrystalline layers of the different conductivity types on both surfaces of a monocrystalline semiconductor substrate to form a diode, by which eliminating diffusion and autodoping from the substrate, thereby uniformizing the impurity distribution of the high-resistance region. CONSTITUTION:With a high-resistance monocrystalline silicon semiconductor substrate 11 as a parent material, a polycrystalline silicon layer 12 of P-type impurity doping is grown on one surface thereof by PVD or CVD, and thereon a metal electrode 13 (anode) is coated and formed. Further, a polycrystalline layer 14 of N-type impurity doping is formed on the reverse surface of the substrate 11 in a similar manner to the layer 12, and a metal electrode 15 (cathode) is coated and formed on the outer surface of the layer 14, forming a diode. With this, the polycrystalline layers 12, 14 are enabled to grow at a low temperature, and thus easily controlled in thickness. Further, diffusion and autodoping to the substrate 11 side which is a high-resistance layer become very few, and no restriction is imposed on the thickness of the substrate 11. Also, since precision is not required for the thickness of the polycrystalline silicon layers 12, 14, the manufacturing cost becomes inexpensive.</p> |
