| 摘要 |
1,142,735. Electro-depositing metals on semi-conductors. CSF-COMPAGNIE GENERALE DE TELEGRAPHIE SANS FIL. Aug. 4, 1967 [Aug. 12, 1966], No. 35889/67. Heading C7B. A metal, e.g. Cu, Zn, Ni or Pt, is deposited on a semi-conductor body e. g. a Si plate by immersing the body as a cathode in an electrolytic bath comprising an aqueous acid solution, e. g. of HF with a pH of 3, which dissolves oxide coating of the semi-conductor and inhibits reoxidation by the liberation of hydrogen, and then adding to the solution ions of the metal to be deposited, preferably in the form of a salt of the metal in a further acid solution. Thus Cu may be deposited by adding a solution containing 25 g/1 CuCl 2 , 195g/l NaCl and 25 g/l HCl. Surfaces of the semiconductor not to be covered with metal may be protected with a 1 micron thick SiO 2 layer. |
