| 摘要 |
PROBLEM TO BE SOLVED: To lessen the wear of material due to plasma casting and thereby avoid contamination of the material due to wear at the time of plasma processing, by using as a member for a semiconductor manufacturing equipment glass carbon having such a crystalline state as to have a specified average distance between lattice planes and a specified size for crystallites. SOLUTION: This member for a semiconductor manufacturing equipment is made of glass carbon having the even composition which is obtained by burning and carbonizing thermosetting resin. It has high purity characteristics of 5 ppm or below for the total ash component, 2 ppm or below for metal impurities, and 30 ppm or below for the total sulfur component. It is preferred that the surface smoothness is as high as possible. As for this glass carbon material, such material is used that has a crystalline state of the average distance between lattice planes d002 0.346-0.364 nm and the size of crystallites Lc (002) 1.7-3.5 nm. The crystalline state of the glass carbon has the feature that the crystallinity of the glass carbon has the amorphous carbon crystal structure of the standard level or above within a specified range. The material with this crystalline state has less damage even if it is irradiated with plasma. |
