发明名称 |
COMPOSITE CONDUCTOR STRUCTURE FOR A SEMICONDUCTOR DEVICE |
摘要 |
The compounds TiSi2 and TaSi2 have been found to be suitable substitutes for polysilicon layers in semiconductor integrated circuits. Suitable conducting properties of the compounds are ensured by providing a relatively thin substrate of polysilicon. |
申请公布号 |
GB2038552(A) |
申请公布日期 |
1980.07.23 |
申请号 |
GB19790042992 |
申请日期 |
1979.12.13 |
申请人 |
WE |
发明人 |
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分类号 |
H01B1/00;H01B1/06;H01L21/28;H01L21/3205;H01L21/768;H01L23/52;H01L23/532;H01L29/49;(IPC1-7):01L29/62 |
主分类号 |
H01B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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