| 摘要 |
PURPOSE:To retard the velocity of growth of a clad layer, etc. grown in a groove for burying an activated layer, and to control the burying of the activated layer excellently by selecting an Al value in the GaAlAs layers of two layers forming a side wall of the groove to a predetermined value. CONSTITUTION:The GaAlAs layer 22' is grown to a GaAs substrate 21, and the Al value is selected to less than 0.5. The GaAlAs layer 23' is grown, and the Al value is selected to value higher than 0.5. A GaAs layer 24 is grown on the layer 23'. A central section is etched, and the groove 21a is formed. The clad layer and the activted layer are grown in the groove, but are not affected even when the retardation of the velocity of growth is generaed. Accordingly, the burying of the activated layer can be controlled in excellent reproducibility. |
