| 摘要 |
PURPOSE:To enable to reduce a test write-in time, by providing three additional circuits, in a non-volatile semiconductor storage device rewritable electrically. CONSTITUTION:In a non-volatile semiconductor storage state, selected word lines WLn and bit line BLM are taken at high potential, information 0 is written in a cell MCA at the cross point, the word line is taken as high potential and the bit line is taken at low potential, and information 1 is written in a cell at the cross point. An additional circuit Z1 makes all the word lines WL0-WL255 to the selected level (high potential) at the same time at test. An additional circuit Z2 makes output lines C0-C31 of a column decoder CD to the selected level at the same time at test. An additional circuit Z3 makes all the word lines to a non- selection level Vss at the same time at test. The output of a row decoder RD and the output of a column decoder CD are at selection level by only one. |
