| 摘要 |
PURPOSE:To improve the relation among a turn-on delay time, dV/dt performance and control sensitivity, by controlling a semiconductor swith element with a low voltage obtaned from a voltage division means toward conduction and shortenting the control electrode of the said element through an auxiliary semiconductor switch. CONSTITUTION:When no input IF is present, no light is radiated on a phototransistor (TR)6 and the TR is nonconductive. Thus the current in the voltage division means 11, 14 flows to an auxiliary TR13 as shown in dotted arrows, the TR13 shortens the control electrode pair of an SCR1 and the dV/dt performance can be increased. When the input IF is given, the TR6 turns on and the current flows to the control electrode of the SCR as shown in the arrow 16. In this case, a low voltage power is supplied to the TR6 from the means 11, 14, then at least, either one of transmission speed and sensitivity can be improved. |
