| 摘要 |
PURPOSE:To obtain a non-single crystal semiconductor with fiber structure that crystallizes at or near the (110) face with almost perpendicularity to the surface of a substrate by adding the specified amount of pentavalent or trivalent impurity to a non-single crystal semiconductor of which the main ingredient is Si to which H or a halogen element is added. CONSTITUTION:A reactive gas is used which is made of a silicate gas diluted by 10- 5X10<4> times with H2 that is used for neutralization of recombination center, and into which trivalent or pentavelent impurity is added by 0.03-10% of the silicate. If a plasma electric field is applied parallel to the formed face, and it is subjected to gaseous phase growth at 100-400 deg.C, an amorphous semiconductor layer is given that has fiber structure and crystallizability at or near the (110) face in the almost vertical direction to the face of a substrate. The electric conductivity of the layer can be made to have 10-200/OMEGAcm in the P type layer and 50-1,000/OMEGAcm in the N type layer. With this structure a semiconductor layer with electric conductivity of that largeness and a small light absorption coefficient in spite of the addition of an impurity can be obtained and it is very suitable to be used as a semiconductor layer for the light irradiation side of a photoelectric convertor. |
