Semiconductor device

摘要

A semiconductor device has a semiconductor substrate (1) of a first conductivity type and an impurity diffusion zone (3) of a second conductivity type formed in a principal surface of the substrate (1). An oxide film (2) is formed on the semiconductor substrate (1) in such a way that at least its peripheral parts extend to the surface of the impurity diffusion zone (3). A phosphorus-containing insulating film (4) is formed on the oxide film (2). The insulating film is situated in such a way that it does not overlap the impurity diffusion zone (3). A conductor layer (5) is also formed over a part of the impurity diffusion zone (3), of the oxide film (2) and of the insulating film (4). Preferably, the impurity diffusion zone (3) forms part of a separating line zone (7). <IMAGE>