| 摘要 |
PURPOSE:To form an Al thin film having high reflectivity over the whole wavelength region, by irradiating, by an ion beam, an Al film formed by a sputtering method. CONSTITUTION:An Al thin film is formed on a substrate of glass, etc., by the ordinary sputtering method. Then this Al thin film is irradiated by a low- energy ion beam to increase the reflectivity of the Al thin film. This treatment can be carried out succeedingly to sputtering in the same vacuum tank that is used in the sputtering stage. It is preferable that ion-beam energy is regulated, in general, to <=about 500V and that irradiation time is, e.g., about 2min in case of 20muA/cm<3> current density. In this way, an Al thin film having high reflectivity even in the low-frequency region can be formed.
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