发明名称 SURFACE EMISSION TYPE SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To improve the efficiency of carrier recombination and to condense a light at a core by pressing an active region cylindrically to a substrate and providing a clad layer having a low refractive index around it and a core region therein. CONSTITUTION:A cylindrical hole 10 having 3mum of diameter and 10mum of depth formed by etching is provided at an N<+> type Al0.5Ga0.5As substrate 17, a P<-> type GaAs active region 15 is interposed between an N<-> type Al0.3Ga0.7As clad layer 16 at its outside and a P<+> type Al0.5Ga0.95As core layer 14 at its inside, a carrier recombination occurs in the cylindrical region, and a light is generated. Since the clad layer has a smaller effective refractive index than that of the active region or the core region, the light is condensed at the center of the cylinder.
申请公布号 JPH01308091(A) 申请公布日期 1989.12.12
申请号 JP19880138420 申请日期 1988.06.07
申请人 CANON INC 发明人 IKEDA SOTOMITSU
分类号 H01S5/00;H01S5/183 主分类号 H01S5/00
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