发明名称 PATTERN FORMATION
摘要 PURPOSE:To prevent the breakdown or deformation of resist patterns, thereby facilitating the release of the resist pattern parts in the final process by a method wherein an organic layer is formed between a substrate and a resist layer to fill the pits of the substrate with the organic layer which is composed of an easily releasable high molecular compound. CONSTITUTION:An easily releasable high molecular compound in low viscosity is filmed on a ceramic substrate with multiple pits while oscillating the substrate 1 to form an organic layer 2. Firstly, the organic layer 2, after heat treatment, is coated with an ionized radiation resist to be prebaked. Secondly, said substrate 1 is exposed to ultraviolet ray, X-ray, etc., and then the upper layer resist part is developed and postbaked at specified temperature to form resist patterns 3'. Thirdly, the organic layer part of the exposed lower layer is dry-etched away using the resist patterns as masks. Finally, a film is formed by a process similar to lift off process and the resist pattern parts 3' are released by immersing them in a releasing solution in an ultrasonic cleaning vessel to form lift off patterns 6. Through these procedures, such a problem as the breakdown or deformation of the resist due to expansion of any gas contained in the pits can be settled to facilitate the performance in the resist releasing process.
申请公布号 JPH01308030(A) 申请公布日期 1989.12.12
申请号 JP19880140226 申请日期 1988.06.07
申请人 DAINIPPON PRINTING CO LTD 发明人 SONEHARA AKIO
分类号 G03F7/26;G03C1/00;G03C5/00;G03F7/00;G03F7/095;H01L21/027;H01L21/30;H01L21/306 主分类号 G03F7/26
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