发明名称 PRODUCTION OF SILICON CARBIDE-BASED MATERIAL
摘要 PURPOSE:To provide a method for producing a high-density and high-strength silicon carbide-based material without any deformation, dimensional change and defects in impregnating the material with silicon and sintering the impregnated material. CONSTITUTION:Silicon carbide powder or a mixed substance of the silicon carbide powder and carbon powder is used as a raw material, formed into a prescribed shape and burned at 1600-2500 deg.C temperature in an inert gas atmosphere under reduced pressure or a nonoxidizing atmosphere such as a vacuum. The burned body is then impregnated with molten silicon.
申请公布号 JPH0597520(A) 申请公布日期 1993.04.20
申请号 JP19910258132 申请日期 1991.10.04
申请人 SUMITOMO METAL IND LTD 发明人 MINAGAWA KAZUHIRO;ARAHORI TADAHISA
分类号 C04B35/565;C04B35/56;C04B41/85 主分类号 C04B35/565
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