发明名称 |
PRODUCTION OF SILICON CARBIDE-BASED MATERIAL |
摘要 |
PURPOSE:To provide a method for producing a high-density and high-strength silicon carbide-based material without any deformation, dimensional change and defects in impregnating the material with silicon and sintering the impregnated material. CONSTITUTION:Silicon carbide powder or a mixed substance of the silicon carbide powder and carbon powder is used as a raw material, formed into a prescribed shape and burned at 1600-2500 deg.C temperature in an inert gas atmosphere under reduced pressure or a nonoxidizing atmosphere such as a vacuum. The burned body is then impregnated with molten silicon. |
申请公布号 |
JPH0597520(A) |
申请公布日期 |
1993.04.20 |
申请号 |
JP19910258132 |
申请日期 |
1991.10.04 |
申请人 |
SUMITOMO METAL IND LTD |
发明人 |
MINAGAWA KAZUHIRO;ARAHORI TADAHISA |
分类号 |
C04B35/565;C04B35/56;C04B41/85 |
主分类号 |
C04B35/565 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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