SILICON CARBIDE-METALLIC SILICON COMPOSITE MATERIAL AND ITS PRODUCTION

摘要

PURPOSE:To form a silicon carbide film by heating a silicon carbide-metallic silicon composite material in a neutral or inert atmosphere having a carbon monoxide concentration higher than a specific level at a temperature within a specific range, thereby converting the metallic silicon on the surface layer into silicon carbide. CONSTITUTION:A silicon carbide-metallic silicon composite material is heated at 1100-1420 deg.C in a neutral or inert gas atmosphere having a carbon monoxide concentration of >=2% to uniformly convert the metallic silicon on the surface layer into silicon carbide. The thickness of the formed silicon carbide layer is preferably >=150mum from the viewpoints of economy and the prevention of the layer from peeling.