发明名称 CALCULATING METHOD FOR CHARACTERISTIC OF SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To allow calculation of a plurality of types of characteristics at once by preparing a plurality of calculating conditions and performing calculations while switching the calculating conditions with reference to decision conditions utilizing the variation rate to specific values during calculation step of element characteristics. CONSTITUTION:Calculation conditions relevant to device and circuit are inputted. Calculation conditions for device include impurity concentration distribution and lattice division for numeric calculation. Calculation conditions for circuit include temporal fluctuation of a gate circuit A and an associated voltage supply VEG for gate ON, circuit conditions for the temporal fluctuation of a gate circuit B and an associated voltage supply VEG for gate OFF. Initial conditions for the circuit A are then inputted to start turn ON calculation. Characteristic values are then produced through convergence calculation and a decision is made whether the calculation is ended. In case of continuation current IA and voltage VA are monitored and a decision is made whether it is steady ON. If the conditions are not satisfied, variables are updated and turn ON calculation is continued through the circuit A. If the conditions are satisfied, switching is made to the circuit B where turn OFF calculation is carried out. The procedures are repeated to calculate turn ON characteristics and turn OFF characteristics at once.
申请公布号 JPH0658990(A) 申请公布日期 1994.03.04
申请号 JP19920210056 申请日期 1992.08.06
申请人 HITACHI LTD 发明人 KOSAKA HIROSHI
分类号 G01R31/28;G06F17/50;G06F19/00 主分类号 G01R31/28
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