| 摘要 |
A semiconductor device and a method for manufacturing a semiconductor device having local interconnections for making electrical connection among conductive regions. The semiconductor device and the method for manufacturing the same utilizes interconnections made of a material of which selectivity of etching is high with respect to a semiconductor layer. The local interconnection is formed by patterning a tungsten nitride film with an etchant gas including a gas comprising fluorine. In addition to the gas comprising fluorine, a gas comprising hydrogen is introduced, at the latest, when the tungsten nitride film becomes thinned.
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