| 摘要 |
PROBLEM TO BE SOLVED: To provide a temperature detection circuit which suppresses an irregularity in a detection temperature, whose reliability is enhanced and whose area is reduced. SOLUTION: When the leakage current of a P-N junction is used, a poly-Si gate layer 35 and an N<+> diffusion region 31 are arranged in the neighborhood of an N<+> diffusion region 32 to be used as a leak path, and a MOS transistor is formed. In addition, the gate region (the gate layer 35) and the drain region (the diffusion region 31) of the MOS transistor are connected, and the operating region of the MOS transistor is used as a saturation region. Thereby, even when all imaginable production irregularity parameters are taken into consideration, an irregularity in a detection temperature due to a production irregularity can be reduced. In addition, a large resistance which is required in conventional cases is not required, and the formation area of a temperature detection circuit can be reduced. |
