| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of optimizing exposure method capable of shortening time and improving optimum precision required for cost reduction and optimization. SOLUTION: A plural number of patterns whose behavior vary under various focal points are provided on a mask and transferred, by exposing the resist on the same wafer by varying the exposure and focal point and measuring the result of the above transferring, and the dispersion of the transferred result is found. The pattern corresponding to the smallest dispersion is found and the exposing condition is optimized by selecting the exposing condition, which indicates the same behavior as the behavior to the focal point of the pattern corresponding to the smallest dispersion. |
