| 摘要 |
PROBLEM TO BE SOLVED: To provide such a semiconductor device that can prevent insulation breakdown of gate insulation film in advance and has a double diffusion type field effect transistor structure to avoid the breakdown of element due to surge voltage generating under operation. SOLUTION: A device is provided with a plurality of double diffusion type field effect transistor cells connecting electrically with each other and a Zener diode 130 or a protection circuit connecting electrically between gate and source constituting the double diffusion type field effect transistor cells. The conventional gate pad is separated into a first gate pad 20 connecting electrically with the gate and a second gate pad 20 connecting electrically with the Zener diode 130 or protection circuit. In the inspection step, the Zener diode 130 is separated electrically from the gate, and in the bonding step, the first gate pad 20 is connected electrically with the second gate pad 30 through a bonding wire 150. |
