| 摘要 |
<p>Thin film, n-channel transistors in which the active layer is an ordered film of a substituted phthalocyanine coordination compound with a field-effect mobility greater than 10<-3> cm<2>/Vs and a conductivity in the range of about 10<-9> S/cm to about 10<-7> S/cm at 20 DEG C are disclosed. Examples of suitable substituted phthalocyanines include copper phthalocyanine, zinc phthalocyanine, hydrogen phthalocyanine, and tin phthalocyanine in which the phthalocyanine has at least one fluorine or chlorine substituent on at least one of its six-membered rings. Thin film devices made of these materials have an on/off ratio of at least about 10<3>. It is advantageous if the device is fabricated using a process in which the substrate is heated to a temperature in the range of about 30 DEG C to about 215 DEG C when the film is formed thereon. <IMAGE></p> |
