发明名称 METHOD FOR PRODUCING MONOCRYSTALS OF LANTHANUM AND GALLIUM SILICATE
摘要 The present invention pertains to the chemical techniques used in the field of oxide-based composite materials for growing piezo-electric monocrystals that essentially consist of lanthanum and gallium silicate La3Ga5SiO14. The lanthanum and gallium silicate crystals are grown according to the Chokhralskiy method on a seed crystal having an orientation of <01.1>, <02.1>, <02.3> and <03.2>. The melt mixture is obtained in two steps according to a method of high-temperature self-propagating synthesis.
申请公布号 WO9961686(A9) 申请公布日期 2000.02.10
申请号 WO1999RU00168 申请日期 1999.05.21
申请人 TOVARISCHESTVO S OGRANICHENNOI OTVETSTVENNOSTIJU FIRMA "FOMOS";ALENKOV, VLADIMIR VLADIMIROVICH;BOUZANOV, OLEG ALEXEEVICH;GRITSENKO, ALEXANDR BORISOVICH 发明人 ALENKOV, VLADIMIR VLADIMIROVICH;BOUZANOV, OLEG ALEXEEVICH;GRITSENKO, ALEXANDR BORISOVICH
分类号 C30B15/00 主分类号 C30B15/00
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