发明名称 |
Method and system for on-line monitoring plasma chamber condition by comparing intensity of certain wavelength |
摘要 |
A method for operating a plasma processing system comprises the following steps. Produce a plasma in a plasma processing chamber operating upon a selected workpiece. Perform in situ detection of electromagnetic radiation of a certain wavelength generated in the plasma in the plasma processing chamber. Calculate a first intensity difference of the certain wavelength from a set point of intensity. Halt production of the plasma in the plasma processing chamber if the first intensity difference is outside of specifications.
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申请公布号 |
US6157867(A) |
申请公布日期 |
2000.12.05 |
申请号 |
US19980031654 |
申请日期 |
1998.02.27 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
HWANG, YUAN-KO;CHO, CHING-WEN |
分类号 |
C23C14/54;C23C16/52;G05B23/02;H01J37/32;(IPC1-7):G06F19/00 |
主分类号 |
C23C14/54 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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