发明名称 POWER SEMICONDUCTOR MODULE
摘要 PROBLEM TO BE SOLVED: To optimize a ceramic substrate, the quality of material in a metal base, dimensions, a junction material, and a boding method for improving reliability and for lengthening a life in a power semiconductor module. SOLUTION: In this power semiconductor module, a package integrated with terminal is combined with the circuit assembly body of the metal base 1, ceramic substrate 2 and power semiconductor chip 9. In this case, in the ceramic substrate, a front circuit plate 8b and a back plate 8c are joined to both the surfaces of a ceramic plate 8a, and the metal base is soldered to the ceramic substrate. Also, the metal base is made of copper and a copper alloy having a thermal conductivity of 250 W/mK or more, and the plate thickness is set to 3.9 to 6 mm. In the ceramic substrate, the thickness of the ceramic plate is set to 0.1 to 0.65 mm, the thicknesses of the front circuit and back plates are set to 0.1 to 0.5 mm, the external dimensions are set to 50 mm×50 mm maximum, aspect ratio is prescribed from 1:1 to 1:1.2, solder having a melt point of 183 to 250 deg.C is used, and the layer thickness is set to 0.1 to 0.3 mm for bonding the metal base to the ceramic substrate by solder.
申请公布号 JP2002203942(A) 申请公布日期 2002.07.19
申请号 JP20000402127 申请日期 2000.12.28
申请人 FUJI ELECTRIC CO LTD 发明人 KOBAYASHI TAKATOSHI;MIYASAKA TADASHI;YAMADA KATSUMI;MOROZUMI AKIRA
分类号 H01L23/12;H01L23/373;H01L25/07;H01L25/18;H02M7/00 主分类号 H01L23/12
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