| 摘要 |
PROBLEM TO BE SOLVED: To provide an MESFET that can be turned off by a sufficiently small negative voltage. SOLUTION: In an n-type active layer 12, plural recesses 18 having a shape that is isotropically spread from a surface in a depth direction, and a gate electrode 20 is formed on an inner wall in the recess 18. In this manner, distance between the electrodes 20 is formed so that a site that is deeper than the surface of the n-type active layer 12 becomes near, even if an adjacent gate electrode 20 is arranged in any direction, thus setting a depletion layer formed in the n-type active layer 12 to a pinch-off state, even if the negative voltage is small, and hence turning off the MESFET 100 by the sufficiently small negative voltage.
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