| 摘要 |
PROBLEM TO BE SOLVED: To reduce resistances of word lines, to suppress junction leakages, to reduce a contact resistance and dimensions of a DRAM cell by increasing the contact areas between diffused layers and draw-out electrodes, to secure dielectric strengths between the word lines and the draw-out electrodes, and to suppress a short channel effect by extending an effective channel length, in a DRAM, and to stabilize transistor characteristics. SOLUTION: A transistor as a memory device, which has diffused layers 13 formed in a surface of a semiconductor substrate 11, word lines 16 formed in grooves 14 formed in the semiconductor substrate 11 including the diffused layers 13, and draw-out electrodes 21 connected with the diffused layers 13 so as to overlap the word lines 16 via first insulating films 19, and a transistor as a logic device, which has silicide layers 58 and 68 formed on diffused layers 55 and 65, are formed on the same semiconductor substrate 11. Gate electrodes 51 and 61 of the logic device have polymetal structures.
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