METHOD OF GROWING HIGH-QUALITY BULK SINGLE CRYSTAL HAVING HIGHLY FLAT FACET

摘要

PROBLEM TO BE SOLVED: To provide a method of growing a high-quality bulk single crystal having a facet excellent in flatness by a sublimation process using a horizontal growth system. SOLUTION: In the vapor phase growth process of the bulk single crystal using the sublimation process, a crystal growth vessel 1 is constituted by joining horizontal growth tubes of different sectional areas and the compound crystal raw material 3 is arranged in its high temperature TH and one kind 4 of the constitution elements of the compound crystal raw material is arranged in its low temperature TL. The high-quality bulk single crystal naturally formed with the high-flatness facet controlled in the deviation from a stoichiometric composition is grown on the compound crystal raw material under the conditions under which a sectional area ratio S(=SL/SH) is 0 m) is 0<=ΔT<=20 when the sectional areas of the growth tubes and the temperature gradient on the TH side are respectively defined as SH andΔT and the sectional areas of the growth tubes on the TL side are defined as SL.