| 摘要 |
PURPOSE:To enable simultaneous formation of flat polycrystalline Si and epitaxial Si having good crystallizability by forming on an Si substrate an insulating layer subjected to patterning, and causing Si to grow on the whole surface after implanting Si ions into the insulating layer. CONSTITUTION:An SiO2 layer is formed on an Si substrate 1, and patterning is performed, thereby exposing the surface 1a of the partial substrate 1. Then, Si ions 3 are implanted into the layer 2. Then, polycrystalline Si is formed on the layer 2 and the surface 1a. At this time, on the surface 1a, with the substrate 1 as a seed crystal polycrystalline Si grows as monocrystalline epitaxial Si 6 having good crystallizability. On the other hand, the polycrystalline Si formed on the layer 2 is formed in the state of less irregularities with the Si implanted into the layer as a seed. Therefore, by using this method, the base region of the electrode lead portion of a bipolar transistor or the like can be manufactured with a small space. |
