| 摘要 |
A semiconductor light emitting device comprises: a substrate; an n-type layer provided on the substrate and made of a nitride semiconductor material; a multiple quantum well structure active layer including a plurality of well layers each made of InxGa(1-x-y)AlyN (0<=x, 0<=y, x+y<1) and a plurality of barrier layers each made of InsGa(1-s-t)AltN (0<=s, 0<=t, s+t<1), the multiple quantum well structure active layer being provided on the n-type layer; and a p-type layer provided on the multiple quantum well structure active layer and made of a nitride semiconductor material. The p-type layer contains hydrogen, and the hydrogen concentration of the p-type layer is greater than or equal to about 1x10<16 >atoms/cm<3 >and less than or equal to about 1x10<19 >atoms/cm<3>.
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