发明名称 |
Method and system for scaling nonvolatile memory cells |
摘要 |
A method and system for providing a semiconductor device are described. The method and system include providing a plurality of gate stacks and a first source drain halo implant. The first source and drain halo implant uses the plurality of gate stacks as a mask. The method and system also include providing a lightly doped source and drain implant and a N+ source and drain implant. The source connection implant is for connecting a portion of the plurality of sources. The second source and drain implant uses the plurality of gate stacks as a mask. Moreover, CoSi formed on the source region provides a lower resistence for lines connecting the sources, allowing a lower dose to be used for the N+ source and drain implant.
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申请公布号 |
US6806155(B1) |
申请公布日期 |
2004.10.19 |
申请号 |
US20020150255 |
申请日期 |
2002.05.15 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KO KELWIN;CHANG CHI |
分类号 |
H01L21/8234;H01L21/8247;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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