| 摘要 |
PURPOSE:To shorten development time by maintaining development temp. high at the beginning of the development and low after a prescribed time from it in developing a photoresist film with trimethylhydroxyethylammonium hydroxide. CONSTITUTION:The photoresist film on a substrate is developed with a developing soln. of trimethylhydroxyethylammonium hydroxide, at a development temp. as high as 15-50 deg.C at the beginning of the development and after a prescribed from the beginning as low as 5-35 deg.C, thus permitting activity of the developing soln. to be enhanced at the beginning of the development and then, the temp. to be gradually lowered to a state low in activity with the progress of the development, and dimensional stability to be improved, accordingly, the development time to be shortened, film decrease to be suppressed to the min., and scum to be removed by controlling the temp. of the development soln. in accordance with the progress of the development. |
