发明名称 THIN FILM TRANSISTOR DISPLAY PLATE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To secure the contact reliability between a signal line and a driving integrated circuit. SOLUTION: A gate line containing a gate electrode, a gate insulation film, a semiconductor layer, a resistive contact layer, a data line having a source electrode and a drain electrode are formed on the upper part of an insulation substrate. Subsequently, a protective film 180 is laminated and is patterned, a contact hole 182 that exposes a contact part of the gate line or the data line is formed, thereafter, IZO is laminated on the upper part of the protective film 180 and is patterned and a pixel electrode connected with the drain electrode and a contact member connected with the contact part are formed. The protective film 180 contains a first part 184 on the upper part of the contact part, a second part 188 having a film thicker than the first part and a third part 186 which is located between the first part and the second part, allows the thickness to gradually increase from the first part up to the second part and is formed as a tapered structure having an inclination angle of the range 5-10°. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005049880(A) 申请公布日期 2005.02.24
申请号 JP20040222423 申请日期 2004.07.29
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIM SON-MAN;SO EIKYU;KO KOSHOKU;KI TOKEN;LEE SEIEI;YOUN JOO-AE;CHO SHOYU
分类号 G02F1/1333;G02F1/1345;G02F1/1362;G02F1/1368;G09F9/30;H01L21/77;H01L21/84;H01L27/01;H01L27/12;H01L27/32;H01L29/45;H01L29/49;(IPC1-7):G09F9/30;G02F1/133;G02F1/136;G02F1/134 主分类号 G02F1/1333
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