发明名称 |
Method for forming a metallization structure in an integrated circuit |
摘要 |
A method for fabricating a metallization structure is presented. The method preferably includes ion metal plasma depositing a wetting layer within a cavity defined in a dielectric layer. The wetting layer preferably includes titanium. The method preferably further includes sputter depositing a bulk metal layer within the cavity and upon the wetting layer. Sputter depositing of the bulk metal layer is preferably performed in a single deposition chamber at least until the cavity is substantially filled.
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申请公布号 |
US6969448(B1) |
申请公布日期 |
2005.11.29 |
申请号 |
US19990476669 |
申请日期 |
1999.12.30 |
申请人 |
CYPRESS SEMICONDUCTOR CORP. |
发明人 |
LAU GORLEY L. |
分类号 |
H01L21/285;C23C14/04;C23C14/34;C23C14/35;C23C14/54;H01L21/28;H01L21/3205;H01L21/44;H01L21/768;H01L23/52;(IPC1-7):C23C14/34 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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